Abstract:
In this article, the self-heating effect (SHE) of both dc and ac for a three-channel nanowire-field effect transistor (FET) is investigated and analyzed. In the dc mode, as ΔTmax (definition: Tmax−300 K) increases to 65 K, the transistor suffers from an Ion degradation of 3.8% along with a Rth of 4.875 [K/ μW ]. In the ac mode, as the heating time (same as the pulse time) increases, the heat is accumulated more and the cooling time increases accordingly. It is confirmed that ΔTmax decreases as the device operating frequency increases and ΔTmax saturates to about 40 K at 4 GHz. Finally, the thermal characteristics and the lifetime are analyzed while changing the duty cycle to 25%, 50%, and 75%. It shows that ΔTmax increases to 38, 42, and 45 K, respectively, and HCI and BTI lifetime can be increased up to two times and three times, respectively.