JOURNAL

A New Physical Model for Program Transients of Cylindrical Charge-Trap-Based NAND Flash Memories

Haechan Choi, Jinil Yoo, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Investigation of Endurance Characteristics in 3-D nand Flash Memory With Trap Profile Analysis

Hyungjun Jo, Jongwoo Kim, Yonggyu Cho, Hyunyoung Shim, Jaesung Sim, Hyungcheol Shin

2024

IEEE Transactions on Electron Devices(TED)

Temperature Dependence Modeling of Grain Boundary Barrier Height in Macaroni MOSFETs

Juhyun Kim and Hyungcheol Shin

2023

IEEE Transactions on Electron Devices(TED)

Modeling of Threshold Voltage Shift by Neighboring Transistors for Macaroni Channel MOSFETs in Series

Quan Nguyen-Gia and Hyungcheol Shin

2023

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD)

Monte Carlo Simulator for Threshold Voltage Distribution of 3-D nand Flash Memory Using Machine Learning

Jang Kyu Lee, Eunseok Oh and Hyungcheol Shin

2023

IEEE Transactions on Electron Devices(TED)

An Innovative Program Scheme for Reducing Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory

Sangmin Ahn, Hyungjun Jo, Sungju Kim, Sechun Park, Kyunam Lim, Jongwoo Kim and Hyungcheol Shin

2023

IEEE Transactions on Electron Devices(TED)