JOURNAL

Developing an ultimate 3D NAND flash memory simulation environment for operation and optimization

Jooyoung Lee, Jinil Yoo and Hyungcheol Shin

2026

Journal of Computational Electronics (JCE)

Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory

Jooyoung Lee and Hyungcheol Shin

2026

Journal of Computational Electronics (JCE)

Strategies to Improve Efficiency of Select-Gate Voltage Floating During GIDL-Assisted Erase in 3-D NAND Flash Memory

Sungju Kim; Jaeyeop Jung; Hyungcheol Shin

2026

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD)

Modeling and Optimization of 3-D Bandgap-Engineered NAND Flash for Program Operation by Multilayer Tunneling With Trap Physics of Tunneling Nitride

Haechan Choi, Jinil Yoo and Hyungcheol Shin

2026

IEEE Transactions on Electron Devices (TED)

A long short-term memory neural network-based approach for retention lifespan prediction in 3D NAND flash memory

Eunseok Oh and Hyungcheol Shin

2026

Japanese Journal of Applied Physics (JJAP)

Impact of Elliptical Cell Geometry and Program Voltage on RTN-Induced Threshold Voltage Shift in 3-D NAND Flash

Eunseok Oh and Hyungcheol Shin

2025

IEEE Transactions on Electron Devices (TED)