Home · DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array
Home · DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array
DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array
저자
Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung-Gook Park, and Hyungcheol Shin