Abstract:
In this brief, we have investigated the program disturb characteristics caused by drain-induced barrier lowering (DIBL) in a 32-nm nand Flash memory device. It was found that the V TH shift of the ( N + 2)th erased state cell is larger than that of the ( N + 1)th erased state cell if it is assumed that the channel of the N th cell is cut off. It is revealed that the cut off is caused by a cell-to-cell coupling effect that is becoming more severe in the development of high-density Flash memory arrays.