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DIBL-Induced Program Disturb Characteristics in 32-nm NAND Flash Memory Array

저자

Myounggon Kang, Wookghee Hahn, Il Han Park, Juyoung Park, Youngsun Song, Hocheol Lee, Changgyu Eun, Sanghyun Ju, Kihwan Choi, Youngho Lim, Seunghyun Jang, Seongjae Cho, Byung-Gook Park, and Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices(TED)

출간연도

2011

링크