바로가기 메뉴
본문 바로가기
푸터 바로가기
서울대학교
Register
Log in
English
Korean
English
English
Korean
Device Research Laboratory
DRL
LECTURE
RESEARCH
PUBLICATIONS
BOARD
사이트맵
Please input keywrod
TOP
Home
·
Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
Home
·
Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
Investigation of Random Telegraph Noise Scaling Dependency in 3-D NAND Using Monte Carlo Simulator
저자
Eunseok Oh, Hyungcheol Shin
저널 정보
IEEE Transactions on Electron Devices
출간연도
2025
링크
Prev
이전
Investigation of Cell Variation Effect on Z-Interference in Charge-Trap-Based 3-D NAND Flash Memory
다음
Modeling of effective mobility in 3D NAND flash memory with polycrystalline silicon channel
Next
목록 보기