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Seoul National University Device Research Laboratory

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Home · Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory
Home · Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory

Investigation of retention characteristic improvement in reprogram process based on a physical model for 3D NAND flash memory

저자

Jooyoung Lee and Hyungcheol Shin

저널 정보

Journal of Computational Electronics (JCE)

출간연도

2026

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