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Seoul National University Device Research Laboratory

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Home · Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory
Home · Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

Modeling Attempt-to-Escape Frequency: Tunneling Emission of Trapped Electrons in Tunneling Oxides of 3-D NAND Flash Memory

저자

Myung Jin, Hyungcheol Shin

저널 정보

IEEE Transactions on Electron Devices (TED)

출간연도

2025

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