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Seoul National University Device Research Laboratory

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Home · Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories
Home · Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories

Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories

저자

Sangmin Ahn and Hyungcheol Shin

저널 정보

IEICE Electronics Express

출간연도

2021

링크

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