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Prediction of Random Telegraph Noise-induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning
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Prediction of Random Telegraph Noise-induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning
Prediction of Random Telegraph Noise-induced Threshold Voltage Shift and Its Scaling Dependency Using Machine Learning
저자
Eunseok Oh, Hyungcheol Shin
저널 정보
IEEE Journal of the Electron Devices Society
출간연도
2024
링크
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이전
A New Semi-Analytical Model for Erase Transients of 3-D Gate-All-Around (GAA) NAND Flash Memories
다음
Machine Learning-Based Prediction of Threshold Voltage Distribution Due to Lateral Migration in 3-D NAND Flash Memory
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