컨퍼런스(국내)

Conference
[2010 SSDM] Bandgap Engineered Nanowire (BEN) SONOS NAND Flash Memory
[2010 SSDM] Single electron transistors (SETs) for reducing Source/Drain resistance and MOS current
[2010 ICPS] Comparison of low frequency noise characteristics between channel and gateinduced drain
[2010 AWAD] A New Cone-Type 1T DRAM Cell
[2010 AWAD] Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
[2010 ITC-CSCC] Simulation of Retention Characteristics in a Double-Gate and Recessed-Channel 1T DRA