컨퍼런스(국내)

Conference
[2009 ISDRS] Fabrication and Characterization of Buried-Gate Fin and Recess Channel MOSFET for High
[2009 IIRW] The critical role of the defect structural relaxation for interpretation of noise measur
[2009 SSDM] Device and Circuit Co-Design Strategy for Radio Frequency (RF) Applications Based on Sil
[2009 VLSI] The first observation of shot noise characteristics in 10-nm scale MOSFETs
[2009 AWAD] Study on Dependence of Self-Boosting Channel Potential on Device Scale and Doping Concen
[2009 ITC-CSCC] Analytical Modeling of Radial Channel Potential and Surface Charge Density of Cylind