컨퍼런스(국내)

Conference
[2016 대한전자공학회 추계학술대회] Intrinsic Gate Delay를 고려한 Nanowire-FET에서의 채널 간 간격 분석
[2016 대한전자공학회 추계학술대회] Nanowire FET에서 채널과 기판 사이 산화막 두께와 도핑에 다른 GIDL 분석
[2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances
[2016 Nano Korea] Extraction and Analysis of Parasitic Resistance of Nanowire-FET
[2016 Nano Korea] Characteristics of Vth variation according to parameters of line edge roughness (LER) in 5nm node Nano-wire FET
[2016 Nano Korea] Analysis and Comparison of Work Function Variation for 5nm node Single Nanowire FET and 3D Stacked Nanowire FET Devices