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[2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances
[2016 Nano Korea] Extraction and Analysis of Parasitic Resistance of Nanowire-FET
[2016 Nano Korea] Characteristics of Vth variation according to parameters of line edge roughness (LER) in 5nm node Nano-wire FET
[2016 Nano Korea] Analysis and Comparison of Work Function Variation for 5nm node Single Nanowire FET and 3D Stacked Nanowire FET Devices
[2016 Nano Korea] Analysis of Performance and Reliability between Nanowire FET and FinFET for Future
[2016 Nano Korea] Analysis of current-boosting using strain engineering and trenched source/drain in single & stacked nanowire FET
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