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[2015 KCS] Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET
[2015 KCS] The Comparison of Electrical Characteristics Between Nanoplate Fet and FinFET for 5 nm node Technology
[2015 KCS] Extraction of Distance between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage
[2015 KCS] Comparison of Electrical Characteristics between NanoPlate FET and Nanowire FET for 5 nm node Technology
[2015 KCS] The Influence of Variability Sources on SRAM Stability in 90 Å Non-Rectangular Bulk FinFET SRAM Cell
[2007 International Conference on Solid State Devices and Materials] Spatial Distrubution of Channel Thermal Noise in Short-Channel MOSFETs
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