컨퍼런스(국내)

Conference
[2007 Silicon Nanoelectronics Workshop] Small-signal model of MOSFETs with effective channel length of 50nm
[2007 Silicon Nanoelectronics Workshop] Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect
[2007 Silicon Nanoelectronics Workshop] A Capacitor-less 1T DRAM Cell with High Sensing Margin
[2007 Silicon Nanoelectronics Workshop] New Capacitor-less 1T DRAM Cell Based on a Double Gate MOSFET with Vertical Channel (DGVC Cell)
[2007 International Reliability Physics Symposium] Improving the endurance characteristics through boron implant at active edge in 1G NAND flash_
[2007 International Workshop on compact modeling] Analysis for modeling error in a macro-model of RF MOSFETs up to 110 GHz