컨퍼런스(국내)

Conference
[2017 ICSPD] Analysis on Extension region in Nanowire FET Considering Parasitic Resistance and Capac
[2017 ICSPD] Analysis of Process Variation Effect on 6T-SRAM with Gate All Around Nanowire FET
[2017 ICSPD] Intrinsic Characteristics and Process Variation Effect of Nanoplate Vertical FET Device
[2017 ICSPD] Comparison of Finxed/Unfixed Gate Half Pitch Length with the Analysis of Parasitic Resi
[2017 ICSPD] Analysis and Comparison of Intrinsic Characteristics for Single and Multi-channel Nanop
[2016 ISDRS] Analysis and Optimization of RC Delay According to Parameter Characteristics in Vertica