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[2004 The 11th Korean Conference on Semiconductors] The Influence of Deuterium Annealing on the Evolution of Interface Trap Capture Cross Sections in n-MOSFET under Channel-Hot-Electron and Fowler-Nordheim Stresses

기간

Feb. 19-20, 2004

참가자

Hyuck In Kwon, O Jun Kwon, In Man Kang, Myung Won Lee, Hyungcheol Shin, Byung-Gook Park, Woo Suk Hyun, Sang Sik Park, and Jong Duk Lee

대회명

The 11th Korean Conference on Semiconductors

Hyuck In Kwon, O Jun Kwon, In Man Kang, Myung Won Lee, Hyungcheol Shin, Byung-Gook Park, Woo Suk Hyun, Sang Sik Park, and Jong Duk Lee, “The Influence of Deuterium Annealing on the Evolution of Interface Trap Capture Cross Sections in n-MOSFET under Channel-Hot-Electron and Fowler-Nordheim Stresses,” The 11th Korean Conference on Semiconductors, Seoul, Korea, vol. 2, pp. 243-244, Feb. 19-20, 2004