[2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices] Accurate extraction of the trap depth from RTS noise data By including poly depletion effect and surface potential variation in MOSFETs

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Home · [2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices] Accurate extraction of the trap depth from RTS noise data By including poly depletion effect and surface potential variation in MOSFETs

[2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices] Accurate extraction of the trap depth from RTS noise data By including poly depletion effect and surface potential variation in MOSFETs

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July 3-5, 2006

참가자

Hochul Lee, Youngchang Yoon, Hyungcheol Shin

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2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

Hochul Lee, Youngchang Yoon, Hyungcheol Shin, “Accurate extraction of the trap depth from RTS noise data By including poly depletion effect and surface potential variation in MOSFETs”, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Sendai, Japan, pp. 165-170, July 3-5, 2006

[2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices] Accurate extraction of the trap depth from RTS noise data By including poly depletion effect and surface potential variation in MOSFETs

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