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[2006 International Electron Devices Meeting, IEDM] Improving the cell characteristics using low-k gate spacer in 1Gb NAND flash memory

기간

Dec. 11-13, 2006

참가자

Dae Woong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Hyukje Kwon, Wonseong Lee, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin

대회명

IEEE International Electron Devices Meeting

Dae Woong Kang, Sungnam Jang, Kyongjoo Lee, Jinjoo Kim, Hyukje Kwon, Wonseong Lee, Byung-Gook Park, Jong Duk Lee, Hyungcheol Shin, “Improving the cell characteristics using low-k gate spacer in 1Gb NAND flash memory”, IEEE International Electron Devices Meeting, San Francisco, U.S.A., Dec. 11-13, 2006