[2006 Silicon Nanoelectronics Workshop] Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs)

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Home · [2006 Silicon Nanoelectronics Workshop] Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs)

[2006 Silicon Nanoelectronics Workshop] Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs)

기간

June 11-12, 2006

참가자

Seung-hwan Song, Kyung Rok Kim, Jin Ho Kim, Sangwoo Kang, Kwon Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park

대회명

IEEE 2006 Silicon Nanoelectronics Workshop

Seung-hwan Song, Kyung Rok Kim, Jin Ho Kim, Sangwoo Kang, Kwon Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, “Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs),” IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, U.S.A, pp. 53-54, June 11-12, 2006

[2006 Silicon Nanoelectronics Workshop] Fabrication and Characterization of Tri-Gate Field-induced Inter-band Tunneling Effect Transistors (TG-FITETs)

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