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[2006 Silicon Nanoelectronics Workshop] New Capacitor-less 1T DRAM Cell : Surrounding Gate MOSFET with a Vertical Channel (SGVC Cell)

기간

June 11-12, 2006

참가자

Hoon Jeong, Ki-Whan Song, Il Han Park, Tae Hun Kim, Yeun Seung Lee, Seong-Goo Kim, Jun Seo, Kyoungyong Cho, Kangyoon Lee, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park

대회명

IEEE 2006 Silicon Nanoelectronics Workshop

Hoon Jeong, Ki-Whan Song, Il Han Park, Tae Hun Kim, Yeun Seung Lee, Seong-Goo Kim, Jun Seo, Kyoungyong Cho, Kangyoon Lee, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, ” New Capacitor-less 1T DRAM Cell : Surrounding Gate MOSFET with a Vertical Channel (SGVC Cell),” IEEE 2006 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, U.S.A, pp. 103-104, June 11-12, 2006