[2006 The 13th Korean Conference on Semiconductors] Analytical modeling of MOSFET's noise parameters for RF circuit design using 0.13um CMOS devices

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Home · [2006 The 13th Korean Conference on Semiconductors] Analytical modeling of MOSFET’s noise parameters for RF circuit design using 0.13um CMOS devices

[2006 The 13th Korean Conference on Semiconductors] Analytical modeling of MOSFET’s noise parameters for RF circuit design using 0.13um CMOS devices

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Feb. 23-24, 2006

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전종욱, 김세영, 강인만, 신형철

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The 13th Korean Conference on Semiconductors

전종욱, 김세영, 강인만, 신형철,”Analytical modeling of MOSFET’s noise parameters for RF circuit design using 0.13um CMOS devices,” The 13th Korean Conference on Semiconductors, Jeju, Korea, pp.823-824, Feb. 23-24, 2006

[2006 The 13th Korean Conference on Semiconductors] Analytical modeling of MOSFET’s noise parameters for RF circuit design using 0.13um CMOS devices

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