[2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devieces] FN stress induced degradation on random telegraph signal noise in deep submicron NMOSFETs

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Home · [2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devieces] FN stress induced degradation on random telegraph signal noise in deep submicron NMOSFETs

[2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devieces] FN stress induced degradation on random telegraph signal noise in deep submicron NMOSFETs

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Jun. 2007

참가자

Lee Hochul , Youngchang Yoon , Hyungcheol Shin

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Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices

Lee Hochul , Youngchang Yoon , Hyungcheol Shin, “FN stress induced degradation on random telegraph signal noise in deep submicron NMOSFETs”, Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, pp.9-12, Jun. 2007

[2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devieces] FN stress induced degradation on random telegraph signal noise in deep submicron NMOSFETs

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