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[2007 International Semiconductor Device Research Symposium] Fin Width Variation Effects on Program Disturbance Characteristics in a NAND Type Bulk Fin SONOS Flash Memory

기간

December 12-14, 2007

참가자

Il Hwan Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park, and Jong Duk Lee

대회명

2007 International Semiconductor Device Research Symposium

Il Hwan Cho, Il Han Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park, and Jong Duk Lee, “Fin Width Variation Effects on Program Disturbance Characteristics in a NAND Type Bulk Fin SONOS Flash Memory,” 2007 International Semiconductor Device Research Symposium, Maryland, USA, December 12-14, 2007