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[2007 Silicon Nanoelectronics Workshop] New Capacitor-less 1T DRAM Cell Based on a Double Gate MOSFET with Vertical Channel (DGVC Cell)

기간

June 10-11, 2007

참가자

Yeun Seung Lee, Hoon Jeong, Han Ki Chung, Byung Su Yoo, Seung Beom Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park

대회명

IEEE 2007 Silicon Nanoelectronics Workshop

Yeun Seung Lee, Hoon Jeong, Han Ki Chung, Byung Su Yoo, Seung Beom Kim, Hyungcheol Shin, Jong Duk Lee, and Byung-Gook Park, “New Capacitor-less 1T DRAM Cell Based on a Double Gate MOSFET with Vertical Channel (DGVC Cell)”, IEEE 2007 Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 63-64, June 10-11, 2007