[2007 Silicon Nanoelectronics Workshop] Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect

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Home · [2007 Silicon Nanoelectronics Workshop] Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect

[2007 Silicon Nanoelectronics Workshop] Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect

기간

June 10-11, 2007

참가자

Jin Ho Kim, Seung-hwan Song, Sangwoo Kang, Il Han Park, Kwon Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park

대회명

IEEE 2007 Silicon Nanoelectronics Workshop

Jin Ho Kim, Seung-hwan Song, Sangwoo Kang, Il Han Park, Kwon Chil Kang, Jong Duk Lee, Hyungcheol Shin, and Byung-Gook Park, “Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect”, IEEE 2007 Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 103-104, June 10-11, 2007

[2007 Silicon Nanoelectronics Workshop] Trench Tunneling Barrier Single-Electron Transistors (TSETs) Using Bandgap Increase by Quantum Confinement Effect

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