[2009 한국 반도체 학술대회] FN stress induced degradation on random telegraph noise in N-type silicon nanowire transistor

바로가기 메뉴: 본문 바로가기; 푸터 바로가기

서울대학교

TOP

Home · [2009 한국 반도체 학술대회] FN stress induced degradation on random telegraph noise in N-type silicon nanowire transistor

[2009 한국 반도체 학술대회] FN stress induced degradation on random telegraph noise in N-type silicon nanowire transistor

기간

Feb. 2009

참가자

Seungwon Yang, Bongchan Kim, Younghwan Son, and Hyungcheol Shin

대회명

한국 반도체 학술대회

Seungwon Yang, Bongchan Kim, Younghwan Son, and Hyungcheol Shin “FN stress induced degradation on random telegraph noise in N-type silicon nanowire transistor,” 한국 반도체 학술대회, Feb. 2009

[2009 한국 반도체 학술대회] FN stress induced degradation on random telegraph noise in N-type silicon nanowire transistor

DRL