[2009 한국 반도체 학술대회] Improving the cell characteristics and reduction of RTS noise using field concentration effect of arch-active profile in 4 gbits NAND flash array having 60 nm design rule

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Home · [2009 한국 반도체 학술대회] Improving the cell characteristics and reduction of RTS noise using field concentration effect of arch-active profile in 4 gbits NAND flash array having 60 nm design rule

[2009 한국 반도체 학술대회] Improving the cell characteristics and reduction of RTS noise using field concentration effect of arch-active profile in 4 gbits NAND flash array having 60 nm design rule

기간

Feb. 2009

참가자

Duk Lee and Hyungcheol Shin

대회명

한국 반도체 학술대회

Duk Lee and Hyungcheol Shin, “Improving the cell characteristics and reduction of RTS noise using field concentration effect of arch-active profile in 4 gbits NAND flash array having 60 nm design rule,” 한국 반도체 학술대회, Feb. 2009

[2009 한국 반도체 학술대회] Improving the cell characteristics and reduction of RTS noise using field concentration effect of arch-active profile in 4 gbits NAND flash array having 60 nm design rule

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