[2009 IEDM] RTS-like fluctuation in gate induced drain leakage current of saddle-fin Type DRAM cell

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[2009 IEDM] RTS-like fluctuation in gate induced drain leakage current of saddle-fin Type DRAM cell

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Heesang Kim, Kyungdo Kim, Tae-Kyung Oh, Seon-Yong Cha, Sung-Joo Hong, Sung-Wook Park, and Hyungcheol Shin, “RTS-like fluctuation in gate induced drain leakage current of saddle-fin Type DRAM cell transistor”, IEEE International Electron Devices Meeting, pp.1-4, Dec. 2009

[2009 IEDM] RTS-like fluctuation in gate induced drain leakage current of saddle-fin Type DRAM cell

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