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[2009 ISDRS] Fabrication and Characterization of Buried-Gate Fin and Recess Channel MOSFET for High

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Jae Young Song, Jong Pil Kim, Sang Wan Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, Min-Chul Sun, Garam Kim, Hyun Woo Kim, Jisoo Chang, Sunghun Jung, Hyungcheol Shin, and Byung-Gook Park, “Fabrication and Characterization of Buried-Gate Fin and Recess Channel MOSFET for High Performance and Low GIDL Current”, 2009 International Semiconductor Device Research Symposium, Baltimore, USA, Dec. 9-11, 2009