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[2009 SNW] Novel Multi-Bit Structure and Its Mechanism for High Density Resistive Random Access Memo

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Kyung-Chang Ryoo, Jeong-Hoon Oh, Hongsik Jeong, Hyungcheol Shin, and Byung-Gook Park, “Novel Multi-Bit Structure and Its Mechanism for High Density Resistive Random Access Memory (RRAM)”, 2009 Silicon Nanoelectronics Workshop, Kyoto, Japan, pp. 63-64, June 13-14, 2009