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Home · [2010 Korean Conference on Semiconductors] 3-D Stacked NAND Flash String with Common Gate Structure by Adopting Si/SiGe Selective Etch Process
Home · [2010 Korean Conference on Semiconductors] 3-D Stacked NAND Flash String with Common Gate Structure by Adopting Si/SiGe Selective Etch Process

[2010 Korean Conference on Semiconductors] 3-D Stacked NAND Flash String with Common Gate Structure by Adopting Si/SiGe Selective Etch Process

기간

Feb. 2010

참가자

Min-Kyu Jeong, Ju-Wan Lee, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee

대회명

Korean Conference on Semiconductors

Min-Kyu Jeong, Ju-Wan Lee, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee, “3-D Stacked NAND Flash String with Common Gate Structure by Adopting Si/SiGe Selective Etch Process,” Korean Conference on Semiconductors, pp. 13-14, Feb. 2010

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