바로가기 메뉴
본문 바로가기
푸터 바로가기

서울대학교 DRL

사이트맵
TOP

 

Home · [2010 Korean Conference on Semiconductors] 3-D stacked NAND Flash String with Single-Crystal Si Channel by Adopting Si/SiGe Selective Etch Process
Home · [2010 Korean Conference on Semiconductors] 3-D stacked NAND Flash String with Single-Crystal Si Channel by Adopting Si/SiGe Selective Etch Process

[2010 Korean Conference on Semiconductors] 3-D stacked NAND Flash String with Single-Crystal Si Channel by Adopting Si/SiGe Selective Etch Process

기간

Feb. 2010

참가자

Ju-Wan Lee, Min-Kyu Jeong, Hyuck-In Kwon, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee

대회명

Korean Conference on Semiconductors

Ju-Wan Lee, Min-Kyu Jeong, Hyuck-In Kwon, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee, “3-D stacked NAND Flash String with Single-Crystal Si Channel by Adopting Si/SiGe Selective Etch Process,” Korean Conference on Semiconductors, pp. 280-281, Feb. 2010

목록 보기