Home · [2010 Korean Conference on Semiconductors] A Surface Potential Model for Recessed Channel MOSFETs in Strong Inversion
Home · [2010 Korean Conference on Semiconductors] A Surface Potential Model for Recessed Channel MOSFETs in Strong Inversion
[2010 Korean Conference on Semiconductors] A Surface Potential Model for Recessed Channel MOSFETs in Strong Inversion
기간
Feb. 2010
참가자
Yeonsung Kang, Younghwan Son, Jaeho Lee, Heesang Kim, Byung-Gook Park, Jong-Ho Lee, and Hyungcheol Shin
대회명
Korean Conference on Semiconductors
Yeonsung Kang, Younghwan Son, Jaeho Lee, Heesang Kim, Byung-Gook Park, Jong-Ho Lee, and Hyungcheol Shin, “A Surface Potential Model for Recessed Channel MOSFETs in Strong Inversion,” Korean Conference on Semiconductors, pp. 576-577, Feb. 2010