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[2010 NMDC] Scalable Embedded Ge-Junction Vertical-Channel Tunneling Field-Effect Transistor for Low

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Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, “Scalable Embedded Ge-Junction Vertical-Channel Tunneling Field-Effect Transistor for Low-Voltage Operation,” IEEE Nanotechnology Materials and Devices Conference, pp. 286-290, Oct. 2010