기간
참가자
대회명
Jang-Gn Yun, Dae Woong Kwon, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, “Bandgap Engineered Nanowire (BEN) SONOS NAND Flash Memory,” International Conference on Solid State Devices and Materials, pp. 752-753, Sep. 2010