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Home · [2011 Korean Conference on Semiconductors] Gas Sensing Characterization of Bottom-Gate Graphene FETs Prepared by Using ICP-CVD Method
Home · [2011 Korean Conference on Semiconductors] Gas Sensing Characterization of Bottom-Gate Graphene FETs Prepared by Using ICP-CVD Method

[2011 Korean Conference on Semiconductors] Gas Sensing Characterization of Bottom-Gate Graphene FETs Prepared by Using ICP-CVD Method

기간

Feb. 2011

참가자

Chang-Hee Kim, Hyun-jong Chung, Jinseong Heo, Heejun Yang, Sunae Seo, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee

대회명

Korean Conference on Semiconductors

Chang-Hee Kim, Hyun-jong Chung, Jinseong Heo, Heejun Yang, Sunae Seo, Byung-Gook Park, Hyungcheol Shin, and Jong-Ho Lee, “Gas Sensing Characterization of Bottom-Gate Graphene FETs Prepared by Using ICP-CVD Method,” Korean Conference on Semiconductors, pp. 645-646, Feb. 2011

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