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Home · [2011 NANO Korea] Modulated Charge Storage Layer by Adopting Ge-Doping Method for SONOS Flash Memory Application
Home · [2011 NANO Korea] Modulated Charge Storage Layer by Adopting Ge-Doping Method for SONOS Flash Memory Application

[2011 NANO Korea] Modulated Charge Storage Layer by Adopting Ge-Doping Method for SONOS Flash Memory Application

기간

Aug. 2011

참가자

Dong Hua Li, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park

대회명

NANO Korea

Dong Hua Li, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, “Modulated Charge Storage Layer by Adopting Ge-Doping Method for SONOS Flash Memory Application,” NANO Korea, pp. P1101_195-P1101_195, Aug. 2011

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