Home · [2013 INEC] Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM
Home · [2013 INEC] Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM
[2013 INEC] Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM
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Sunghun Jung, Sungjun Kim, Jeong-Hoon Oh, Kyung-Chang Ryoo, Jong-Ho Lee, Hyungcheol Shin, and Byung-Gook Park, “Investigation of conduction mechanism in Ti/Si3N4/p-Si stacked RRAM,” IEEE International NanoElectronics Conference, pp. 97-99, Jan. 2013