Home · [2013 ISDRS] The Threshold Voltage Variation on Etch angle of Channel-hole in Vertical NAND Flash me
Home · [2013 ISDRS] The Threshold Voltage Variation on Etch angle of Channel-hole in Vertical NAND Flash me
[2013 ISDRS] The Threshold Voltage Variation on Etch angle of Channel-hole in Vertical NAND Flash me
기간
참가자
대회명
Duckseoung Kang, Kyunghwan Lee, Seongjun Seo, Dong Hua Li, and Hyungcheol Shin, “The Threshold Voltage Variation on Etch angle of Channel-hole in Vertical NAND Flash memories”
International Semiconductor Device Research Symposium(ISDRS), 2013.