Home · [2015 KCS] Extraction of Distance between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage
Home · [2015 KCS] Extraction of Distance between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage
[2015 KCS] Extraction of Distance between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage
기간
2015
참가자
Youngsoo Seo, Sungwon Yoo, Hyunsoo Kim, Hyunsuk Kim and Hyungcheol Shin
대회명
Korean Conference on Semiconductors
Youngsoo Seo, Sungwon Yoo, Hyunsoo Kim, Hyunsuk Kim and Hyungcheol Shin, “Extraction of Distance between Interface Trap and Oxide Trap from Random Telegraph Noise in Gate-Induced Drain Leakage”, Korean Conference on Semiconductors(KCS), 2015.