[2015 KCS] Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET

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Home · [2015 KCS] Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET

[2015 KCS] Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET

기간

2015

참가자

Hyunsoo Kim, Sungwon Yoo, Youngsoo Seo and Hyungcheol Shin

대회명

Korean Conference on Semiconductors

Hyunsoo Kim, Sungwon Yoo, Youngsoo Seo and Hyungcheol Shin,”Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET”, Korean Conference on Semiconductors(KCS), 2015.

[2015 KCS] Extraction of Location and Energy Level of Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage of p-MOSFET

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