Home · [2016 IVC] Impact of Line Edge Roughness (LER) on Single and Three Stacked Nanowire FET in Ultra-sca
Home · [2016 IVC] Impact of Line Edge Roughness (LER) on Single and Three Stacked Nanowire FET in Ultra-sca
[2016 IVC] Impact of Line Edge Roughness (LER) on Single and Three Stacked Nanowire FET in Ultra-sca
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Dokyun Son, Kyul Ko, Myounggon Kang and Hyungcheol Shin, “Impact of Line Edge Roughness (LER) on Single and Three Stacked Nanowire FET in Ultra-scaled Logic devices”, 20th International Vacuum Congress, 2016.