[2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances

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Home · [2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances

[2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances

기간

2016

참가자

Jongsu Kim, Hyungwoo Ko, Myounggon Kang and Hyungcheol Shin

대회명

NANO Korea

Jongsu Kim, Hyungwoo Ko, Myounggon Kang and Hyungcheol Shin, “Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances”, Nano Korea, 2016.

[2016 Nano Korea] Optimum Source/Drain Electron Concentration of a 5 nm node Nanowire FET Considering Parasitic Resistances and Capacitances

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