Jongsu Kim, Hyungwoo Ko, Myounggon Kang and Hyungcheol Shin, “Analysis on Extension region in Nanowire FET Considering Parasitic Resistance and Capacitance”, International Conference on Semiconductor Physics and Device (ICSPD), 2017.
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Jongsu Kim, Hyungwoo Ko, Myounggon Kang and Hyungcheol Shin, “Analysis on Extension region in Nanowire FET Considering Parasitic Resistance and Capacitance”, International Conference on Semiconductor Physics and Device (ICSPD), 2017.