Donghyun Ryu, Shinkeun Kim, Myounggon Kang, and Hyungcheol Shin, “Gate induced drain leakage Suppression with Additional oxide in the Side region of the Lateral Nanosheet FET”, Korea Conference on Semiconductor (KCS), 2018.
기간
2018
참가자
Donghyun Ryu, Shinkeun Kim, Myounggon Kang, and Hyungcheol Shin
대회명
Korean Conference on Semiconductors
Donghyun Ryu, Shinkeun Kim, Myounggon Kang, and Hyungcheol Shin, “Gate induced drain leakage Suppression with Additional oxide in the Side region of the Lateral Nanosheet FET”, Korea Conference on Semiconductor (KCS), 2018.