Jangkyu Lee, Changbeom Woo, Jongsu Kim, Myounggon Kang, and Hyungcheol Shin, “Thickness Margin of Ferroelectric Layer for Aspect Ratio Variation in Negative Capacitance Nanowire FET”, Korea Conference on Semiconductor (KCS), 2018.
기간
2018
참가자
Jangkyu Lee, Changbeom Woo, Jongsu Kim, Myounggon Kang, and Hyungcheol Shin
대회명
Korean Conference on Semiconductors
Jangkyu Lee, Changbeom Woo, Jongsu Kim, Myounggon Kang, and Hyungcheol Shin, “Thickness Margin of Ferroelectric Layer for Aspect Ratio Variation in Negative Capacitance Nanowire FET”, Korea Conference on Semiconductor (KCS), 2018.