Jaeyeol Park, and Hyungcheol Shin, “Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation”, IEEE Silicon Nanoelectronics Workshop (SNW), 2019.
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Jaeyeol Park, and Hyungcheol Shin, “Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation”, IEEE Silicon Nanoelectronics Workshop (SNW), 2019.