[2019 VLSI] Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND

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[2019 VLSI] Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND

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Changbeom Woo, Myeongwon Lee, Shinkeun Kim, Jaeyeol Park, Gil-Bok Choi, Moon-sik Seo, Keum Hwan Noh, Myounggon Kang, and Hyungcheol Shin, “Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories”, IEEE Symposia on VLSI Technology & Circuits, 2019.

[2019 VLSI] Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND

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