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[2020 IRPS] Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Progr

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Changbeom Woo, Shinkeun Kim, Jaeyeol Park, Haesoo Kim, Gil-Bok Choi, Moon-Sik Seo, Keun Hwan Noh, and Hyungcheol Shin, “Modeling of Charge Failure Mechanisms during the Short Term Retention Depending on Program/Erase Cycle Counts in 3-D NAND Flash Memories”, IEEE International Reliability Physics Symposium (IRPS), 2020.