[2021 SNW] New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND

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[2021 SNW] New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND

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Hyungjun Jo and Hyungcheol Shin, “New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND Flash Memories”, IEEE Silicon Nanoelectronics Workshop (SNW), 2021.

[2021 SNW] New Read Schemes to Reduce Read Disturbance Due to HCI in Full Boosting Channel 3-D NAND

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